High Current ESD

Description

Produktbeschreibung

Synthesizing experience from industry and academia, this book offers a comprehensive and nuanced perspective on the physics of electrostatic discharge (ESD) phenomena in a range of semiconductor device technologies, illustrating robust design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), fin field-effect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin film transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. Including multiple curated case studies, this book will equip readers with all the tools needed to address current ESD design challenges and embrace the challenges of the future. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability.